| PART |
Description |
Maker |
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| L8801P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF7G24L-160P BLF7G24LS-160P |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G20L-250P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| LR301-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF10H6600P BLF10H6600PS BLF10H6600P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
